200V half-bridge mosfet driver | Electronics Weekly Leave a comment

IXD2012NTR, as will probably be recognized, is designed to drive n-channel mosfet gates that want between 10 and 20V, and might provide a minimal of 1.4A pull-up and 1.8A pull-down (each into short-circuits) from both output. Typical figures are 1.9 and a pair of.3A respectively.

It “is a direct drop-in alternative to in style industry-standard gate driver units”, mentioned firm product supervisor June Zhang.

The machine wants a provide of between 10 and 20V, and the high-side bootstrap circuit can deal with as much as 224V to accommodate this vary with the complete 200V output-side circuit voltage.

Optimised for high-frequency energy functions, claimed Littelfuse, whose information sheet reveals typical figures of 10ns turn-on propagation delay and 220ns for turn-off – matching error is 35ns max. 30ns is the everyday rise time and fall takes 20ns.

There are separate inputs for the high-side and the low-side – permitting an exterior microcontroller to set dead-band timing.

The logic inputs have Schmidt triggers and are suitable with commonplace TTL and CMOS ranges down to three.3V. “It’s endorsed that the enter pulses have a minimal amplitude of two.5V for Vcc = 15V, and a minimal pulse width of 400ns,” mentioned the corporate.

Packaging is 8pin SOIC and operation is over -40 to +125°C.

In addition to in dc-dc and ac-dc converters, the corporate sees it being utilized in Class-D energy amplifiers and stepper motor drivers.

Discover the IXD2012N product page here

Late last year, Nexperia introduced a 110V 4A half-bridge gate driver IC